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Check Product Specifications and description for product details.
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| Vgs(th) (Max) @ Id: | 3V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 25A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Other Names: | 1727-3122-1 568-2345-1 568-2345-1-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8 |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
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