NAND04GW3C2BN6E
NAND04GW3C2BN6E
Part Number:
NAND04GW3C2BN6E
Manufacturer:
Micron Technology
Description:
IC FLASH 4G PARALLEL 48TSOP
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Data sheet:

Introduction

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Check Product Specifications and description for product details.
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Specifications

Write Cycle Time - Word, Page:25ns
Voltage - Supply:2.7 V ~ 3.6 V
Technology:FLASH - NAND
Supplier Device Package:48-TSOP
Series:-
Packaging:Tray
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Memory Format:FLASH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOP
Base Part Number:NAND04G
Access Time:25ns
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