| Vgs(th) (Max) @ Id: | 4V @ 2mA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | ISOPLUS220™ |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 18A, 10V |
| Power Dissipation (Max): | - |
| Packaging: | Tube |
| Package / Case: | ISOPLUS220™ |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 32 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Detailed Description: | N-Channel 800V 25A (Tc) Through Hole ISOPLUS220™ |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
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