| Vgs(th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | Micro3™/SOT-23 |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 600mA, 10V |
| Power Dissipation (Max): | 540mW (Ta) |
| Packaging: | Original-Reel® |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | IRLML5103GTRPBFDKR IRLML5103GTRPBFDKR-ND IRLML5103PBFDKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.1nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 |
| Current - Continuous Drain (Id) @ 25°C: | 760mA (Ta) |
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