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Vgs(th) (Max) @ Id: | 4V @ 100µA |
---|---|
Vgs (Max): | ±20V |
Technology: | MOSFET (Metal Oxide) |
Supplier Device Package: | TO-220AB |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 44A, 10V |
Power Dissipation (Max): | 190W (Tc) |
Packaging: | Tube |
Package / Case: | TO-220-3 |
Other Names: | *IRFB4610PBF SP001570704 |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Drain to Source Voltage (Vdss): | 100V |
Detailed Description: | N-Channel 100V 73A (Tc) 190W (Tc) Through Hole TO-220AB |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
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