| Vgs(th) (Max) @ Id: | 2.32V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-SO |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 2.5W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Other Names: | IRF7832PBFTR SP001570470 |
| Operating Temperature: | -55°C ~ 155°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4310pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
| Email: |
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