| Vgs(th) (Max) @ Id: | 4V @ 20µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO263-3-2 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 44W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | IPB50CN10N G IPB50CN10N G-ND IPB50CN10NGATMA1TR SP000277696 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | N-Channel 100V 20A (Tc) 44W (Tc) Surface Mount PG-TO263-3-2 |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Email: |
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