1N5806US
1N5806US
Part Number:
1N5806US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 150V 1A D5A
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Data sheet:
1N5806US.pdf

Introduction

Images are for reference only.
See Product Specifications for product details.
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Specifications

Voltage - Forward (Vf) (Max) @ If:875mV @ 1A
Voltage - DC Reverse (Vr) (Max):150V
Supplier Device Package:D-5A
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):25ns
Packaging:Bulk
Package / Case:SQ-MELF, A
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:7 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 150V 1A Surface Mount D-5A
Current - Reverse Leakage @ Vr:1µA @ 150V
Current - Average Rectified (Io):1A
Capacitance @ Vr, F:25pF @ 10V, 1MHz
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