Kioxia Europe GmbH has announced that the first UFS of the industry has begun to produce mass. 4.0 flash memory devices integrated with 4 -bit QLC technology per cell.

QLC UFS offers a higher bits density than the traditional UF TLC, so it is excellent for mobile applications that need greater storage capabilities. Advances in controller technology and error correction have allowed QLC technology to achieve thiswhile maintaining competitive performance. The new QLC UF of 512 GB of the company reaches sequential reading speeds of up to 4,200 MB/sys sequential writing speeds of up to 3,200 MB/s, taking full advantage of the speed of the UFS 4.0 interface.

The device is ideal for smartphones and tablets, and other next -generation applications where the greatest storage and performance capacity are key considerations, which include PC, networks, AR/VR, IoT and IA.

Key features include support for high-speed link starting features (HS-LSS), improved safety and support for extended initiator (EXT-IID).

The company was the first to introduce UFS technology and continues to develop new innovative flash products. The new QLC UFS Ver-Phy 5.0 and Unipro 2.0 and admits maximum theoretical interface speeds up to 23.2Gbps per lane or 46.4 Gbps per device.UFS 4.0 is compatible with recoil with UFS 3.1.

"Kioxia first showed 512GBPS QLC UFS 3.1 3.1 in 2022, and we are very excited to bring the first version of QLC UFS Ver. 4.0 to mass production production," says Axel Störmann, director of Technology and Vice President of Kioxia Europe GmbH."QLC technology offers higher cost densities and efficiencies, and is, as a result, especially suitable for intense data that demand a higher interface performance."